Single Crystal Diamond Heat Spreader

1.Excellent Uniform Heat Dissipation：
Free of grain boundary thermal resistance, with stable thermal conductivity of 1800–2000 W/(m·K) and overall heat dissipation uniformity exceeding 99%, effectively eliminating local hotspots on chips. Its heat dissipation capability is 5 times that of pure copper, 7 times that of AlN ceramics, and 1.4 times that of polycrystalline diamond.
2.Ultra-Low Loss at High Frequencies：
As an insulating dielectric with extremely low dielectric constant, it exhibits minimal signal loss in the millimeter-wave RF band, making it ideal for 5G/6G high-frequency devices and far superior to metallic heat dissipation substrates.
3.Thermal Expansion Highly Matched to Chips：
Its coefficient of thermal expansion (CTE) is close to that of SiC/GaN third-generation semiconductor chips, ensuring no warping or stress cracking under high-low temperature cycles, and extending device service life by more than 4 times.
4.Ultra-High Mechanical Stability：
Featuring extremely high hardness and compressive strength, it is impact-resistant and wear-resistant, capable of withstanding transient thermal shocks from high-power devices.
5.Strong Process Compatibility：
The bare substrate allows flexible secondary processing, including laser cutting, step recessing, drilling, slotting, and patterned metallization. It is compatible with all packaging processes such as gold wire bonding, silver sintering, reflow soldering, and pressure bonding.