IGBT chips are preferably bonded and soldered onto conductive substrates using ultrasonic bonding and soldering processes; The conductive substrate is then soldered to the heat dissipation substrate (usually copper), and the heat dissipation substrate is tightly adhered to the heat sink through thermal conductive silicone grease. Introducing diamond film into IGBT modules can significantly improve overall heat transfer performance, quickly transfer a large amount of heat from the device to the heat sink, effectively reduce the operating temperature of the module and the junction temperature of the chip, and extend the service life of IGBT modules.

Applying high thermal conductivity diamond materials to high-power SiC hybrid module packaging structures, the local hot spot heat of IGBT chips and JBS chips in the hybrid module is rapidly diffused from points to surfaces, enhancing lateral heat dissipation. Thereby improving the service life and operational reliability of the hybrid module.