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Copper plated diamond heat sink plate

Featuring high-thermal-conductivity single-crystal / polycrystalline CVD diamond as the insulating heat-dissipation substrate, this product adopts a composite metallization process consisting of a magnetron-sputtered Ti/W transition layer as an underlayer, followed by electrochemically thickened copper plating. Three coating schemes are available: thin-layer seed copper, conventional solderable copper, and thickened high-thermal-conductivity copper.
It retains the core advantages of diamond—ultra-high thermal conductivity, electrical insulation, and low thermal expansion—while leveraging the excellent thermal conductivity, ductility, and low-cost solderability of the copper layer. It is compatible with mainstream high-power packaging processes such as Cu-Sn soldering, nano-silver sintering, reflow soldering, and stud crimping.
It is mainly used in high-power passive cooling, module bonding heat dissipation, and large-area thermal uniformization applications. Compared with gold-plated versions, it offers higher cost-performance and greater overall heat dissipation flux.

Diamond Substrate Parameters

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Metallic Coating Specifications

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