Electronic Grade Single Crystal Diamond

High-purity electronic-grade single crystal diamond (E-SCD) is grown by homoepitaxy using an ultra-high-purity gas-source microwave plasma chemical vapor deposition (MPCVD) process, with the standard {100} crystal plane adopted. Lattice defects and trace impurity levels are strictly controlled throughout the entire growth procedure.
Unlike conventional thermal-management-grade single crystal diamond, this product complies with semiconductor wafer processing standards, featuring extremely low dislocation density, ultra-high electrical insulation, stable electrical properties, and exceptional thermal conductivity.
It can be used both as a high-heat-flux heat-dissipation substrate for third-generation semiconductors and in precision semiconductor processes such as diamond device epitaxy, ion implantation, radiation detection, and quantum sensing. It serves as a dedicated high-purity single-crystal substrate for the high-end semiconductor and optoelectronic industries.